Silicon crystallization apparatus and silicon...

Electric heating – Metal heating – By arc

Reexamination Certificate

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C219S121850, C219S121600

Reexamination Certificate

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07728256

ABSTRACT:
A novel silicon crystallization apparatus and a silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization apparatus includes a moving stage being moved in a horizontal direction, and a fixing plate provided in the moving stage, to fix a substrate. A rotating frame is provided in the moving stage, to rotate the fixing plate.

REFERENCES:
patent: 5913104 (1999-06-01), Piper et al.
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6486437 (2002-11-01), Tanabe
patent: 6513796 (2003-02-01), Leidy et al.
patent: 6514339 (2003-02-01), Jung
patent: 2002/0153360 (2002-10-01), Yamazaki et al.
patent: 2003/0224550 (2003-12-01), Kokubo et al.
patent: 1165972 (1997-11-01), None
patent: 1389600 (2003-01-01), None
patent: 1427451 (2003-07-01), None
patent: 9-21987 (1997-01-01), None
patent: 9-138256 (1997-05-01), None

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