Voltage generating circuit for semiconductor device

Details Voltage generating circuit for semiconductor device Voltage generating circuit for semiconductor device

1990-05-22

1991-04-16

Wong, Peter S.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323315, 3072966, 3072968, G05F 320

Patent

active

050086090

ABSTRACT:
In an output stage, an n-FET and a p-FET are connected in series, which is interposed between a power supply line and a ground. A first serial connection circuit generates a gate potential of the n-FET, and a second serial connection circuit generates a gate potential of the p-FET. The first and the second serial connection circuits are connected in parallel to each other, each of which has its one end connected to the power supply line through a resistor, and its other end connected to the ground through a resistor. As a result, even if a resistance value of the resistor is small, currents to be consumed can be reduced.

REFERENCES:
patent: 3683270 (1972-08-01), Mattis
patent: 3942128 (1976-03-01), Seki et al.
patent: 4346344 (1982-08-01), Blauschild
patent: 4460864 (1984-07-01), Ray
patent: 4628248 (1986-12-01), Birrittella et al.
Reference Voltage Generator, Abilevitz et al., IBM Technical Disclosure Bulletin, vol. 20, No. 10, Mar. 76, pp. 3927-3929.

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