Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-02-13
2010-06-08
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S435000, C257SE31127
Reexamination Certificate
active
07732884
ABSTRACT:
A photoelectric conversion device comprises a semiconductor substrate and a multilayer wiring structure, wherein the multilayer wiring structure includes a first wiring layer which serves as a top wiring layer in an effective region and contains aluminum as a principal component, a first insulation film arranged in the effective region and an light-shielded region so as to cover the first wiring layer, and a second wiring layer which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and contains aluminum as a principal component, and wherein the first insulation film has, in the effective region, a first portion which is positioned above the photoelectric conversion unit, and the first portion functions as at least a part of an interlayer lens.
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Canon Kabushiki Kaisha
Dickey Thomas L
Fitzpatrick ,Cella, Harper & Scinto
Yushin Nikolay
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