Semiconductor device including triple-stacked structures...

Details Semiconductor device including triple-stacked structures... Semiconductor device including triple-stacked structures...

2007-05-10

2010-06-08

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S532000, C257S296000, C257S306000, C257S758000, C257S924000, C257SE27025, C257SE29343

Reexamination Certificate

active

07732895

ABSTRACT:
In a semiconductor device, a plurality of triple-stacked structures all having the same structure are provided. Each of the triple-stacked structures includes one lower electrode layer, at least one upper electrode layer and one dielectric layer sandwiched by the lower electrode layer and the upper electrode layer.

REFERENCES:
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patent: 7514740 (2009-04-01), Hsu et al.
patent: 2005/0082639 (2005-04-01), Kikuta et al.
patent: 2005/0218520 (2005-10-01), Kikuta et al.
patent: 2007/0152295 (2007-07-01), Yeh et al.
patent: 2000-307062 (2000-11-01), None
patent: 2004-193602 (2004-07-01), None
patent: 2007005869 (2007-01-01), None
patent: WO 02/17367 (2002-02-01), None
KR-10-2007-0005869 (Machine Translation).

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