Masking portions of a substrate

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

427 431, 427 531, 427154, 427156, 427259, 156664, B05D 306

Patent

active

043528350

ABSTRACT:
A removable mask (22) protects at least one portion of a substrate (10) during treatment such as irradiation thereof. To obtain mask (22), there is applied over said portion of substrate (10) a parting layer (44) of a metal selected from the group consisting of nickel, aluminum, indium and tin. Over the parting layer (44), there is applied the removable mask (22) of a material which is adherent and harmless to the parting layer (44) and is substantially impenetrable by the treatment. After irradiation, the parting layer (44) is treated with at least a detaching agent sufficiently to detach said parting layer (44) and the mask (22) from substrate (10). For proton bombardment of a substrate (10) which includes gallium arsenide, the parting layer (44) is preferably nickel, the mask is preferably gold and the detaching agent includes hydrochloric acid.

REFERENCES:
patent: 3824133 (1974-07-01), D'Asaro et al.
patent: 4022927 (1977-05-01), Pfeiffer et al.
patent: 4024293 (1977-05-01), Hatzakis
patent: 4122215 (1978-10-01), Vratny
patent: 4165395 (1979-08-01), Chang
patent: 4174219 (1979-11-01), Andres
patent: 4181755 (1980-01-01), Liu et al.
E. C. Fredericks et al., "Polysulfone Lift-Off Masking Technique", IBM Technical Disclosure Bulletin, vol. 20, No. 3, 8/77, p. 989.
H. Dalal et al., "Cr-Cu-Cr Lift-Off Process", IBM Technical Disclosure Bulletin, vol. 20, No. 8, 1/78, pp. 3080-3081.
R. J. Bergeron, "Double Lift-Off Via Interconnection and Passivation Process", IBM Technical Disclosure Bulletin, vol. 21, No. 4, 9/78, pp. 1371-1372.

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