SOI substrate, silicon substrate therefor and it's...

Details SOI substrate, silicon substrate therefor and it's... SOI substrate, silicon substrate therefor and it's...

2006-01-13

2010-02-02

Speer, Timothy M (Department: 1794)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S701000, C428S702000

Reexamination Certificate

active

07655315

ABSTRACT:
A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

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English Machine Translation of Japanese Publication 2005-12676 provided by the JPO website. Retreived Apr. 20, 2009.

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