Semiconductor device, electronic device and fabrication...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S529000, C257SE23149

Reexamination Certificate

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07821134

ABSTRACT:
A semiconductor device includes a lower pad layer, an insulating layer and an upper pad layer. The lower pad layer is provided on a semiconductor substrate. The insulating layer is away from a surrounding of the lower pad layer so that a space having a recess on a surface between the lower pad layer and the insulating layer is formed. The upper pad layer covers over the lower pad layer and the space, extends to an upper face of the insulating layer, and has an area larger than that of the lower pad layer.

REFERENCES:
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6836010 (2004-12-01), Saeki
patent: 6870265 (2005-03-01), Kurimoto et al.
patent: 6977442 (2005-12-01), Akagawa et al.
patent: 2001/0039113 (2001-11-01), Blalock et al.
patent: 2002/0090786 (2002-07-01), Kim et al.
patent: 2004/0183155 (2004-09-01), Seto et al.
patent: 2005/0130388 (2005-06-01), Suh
patent: 2005/0142841 (2005-06-01), Lee
patent: 2005/0212130 (2005-09-01), Imai
patent: 2006/0009023 (2006-01-01), Nair et al.
patent: 2007/0246828 (2007-10-01), Nakatani
patent: 197 45 575 (1998-04-01), None
patent: 0 104 079 (1984-03-01), None
patent: 9-205096 (1997-08-01), None
patent: I247373 (2006-01-01), None
patent: I248148 (2006-01-01), None
patent: I248654 (2006-02-01), None
European Search Report dated Jul. 12, 2007.
Taiwanese Notice of Allowance dated Jun. 4, 2010 with a Search Report (with partial English translation).

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