Composition for an organic hard mask and method for forming...

Details Composition for an organic hard mask and method for forming... Composition for an organic hard mask and method for forming...

2005-12-07

2010-06-15

Chu, John S (Department: 1795)

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

Mixing of two or more solid polymers; mixing of solid...

C430S270100, C430S271100, C430S316000, C430S317000, C430S323000

Reexamination Certificate

active

07737227

ABSTRACT:
A composition for the organic hard mask includes a polyamic acid compound, and a method for forming a pattern is used in a manufacturing process of semiconductor devices by coating the composition for organic hard mask film on an underlying layer, and depositing a second hard mask film with a silicon nitride SiON film thereon to form a double hard mask film having an excellent etching selectivity, thereby obtaining a uniform pattern.

REFERENCES:
patent: 6593043 (2003-07-01), Suwa et al.
patent: 6933087 (2005-08-01), Suwa et al.
patent: 7129011 (2006-10-01), Rushkin et al.
Prince, “Semiconductor Memories,” 2ndE., Wiley, pp. 9,90-91 (1991).
Korean Intellectual Property Office Notice of Rejection, for Korean Patent Application No. 10-2005-0014889, dated Nov. 16, 2006.

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