Sidewall structured switchable resistor cell

Details Sidewall structured switchable resistor cell Sidewall structured switchable resistor cell

2008-06-30

2010-10-12

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE29001, C438S133000

Reexamination Certificate

active

07812335

ABSTRACT:
A method of making a memory device includes forming a first conductive electrode, forming an insulating structure over the first conductive electrode, forming a resistivity switching element on a sidewall of the insulating structure, forming a second conductive electrode over the resistivity switching element, and forming a steering element in series with the resistivity switching element between the first conductive electrode and the second conductive electrode, wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in second direction perpendicular to the first direction.

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