Electron beam exposure mask, electron beam exposure method,...

Details Electron beam exposure mask, electron beam exposure method,... Electron beam exposure mask, electron beam exposure method,...

2005-09-26

2010-12-07

Johnston, Phillip A (Department: 2881)

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

C250S491100, C430S005000

Reexamination Certificate

active

07847272

ABSTRACT:
An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.

REFERENCES:
patent: 6090527 (2000-07-01), Yamazaki et al.
patent: 6815693 (2004-11-01), Kamijo et al.
patent: 5-335221 (1993-12-01), None
patent: 07-312341 (1995-11-01), None
patent: 2003-332225 (2003-11-01), None

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