Phase change memory featuring ferromagnetic layers in...

Details Phase change memory featuring ferromagnetic layers in... Phase change memory featuring ferromagnetic layers in...

2005-08-31

2010-02-23

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S616000, C257SE45002

Reexamination Certificate

active

07667222

ABSTRACT:
A phase change memory comprises a phase-change recording layer for recording information through changing between a crystal phase and an amorphous phase; and a means for applying a tensile strain onto the phase-change recording layer, thereby providing the memory having high reliability, as well as, high tolerance or durability against repetitive rewriting operation.

REFERENCES:
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 7488968 (2009-02-01), Lee
patent: 2007/0018202 (2007-01-01), Zhu
“Applied Physics”, vol. 1, No. 5 (2002), pp. 562-565.

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