Magnetoresistance element magnetic random access memory,...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C365S158000

Reexamination Certificate

active

07855860

ABSTRACT:
A magnetoresistance element includes an antiferromagnetic layer, a fixed ferromagnetic layer, a first nonmagnetic layer and a free ferromagnetic layer. The antiferromagnetic layer is formed on the upper surface side of a substrate. The fixed ferromagnetic layer is formed on the antiferromagnetic layer. The first nonmagnetic layer is formed on the fixed ferromagnetic layer. The free ferromagnetic layer is formed on the first nonmagnetic layer. The fixed ferromagnetic layer is provided with an amorphous layer. The amorphous layer contains amorphous material having a composition expressed by a chemical formula of X—Y—N. X is an element selected from Co, Fe and Ni. Y is an element selected from AI, Si, Mg, Ta, Nb, Zr, Hf, W, Mo, Ti and V. N represents nitrogen.

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English Machine Translation of JP 2000-173022 A to Watanabe et al. published on Jun. 23, 2000.
“40% tunneling magnetoresistance after anneal at 380° C. for tunnel junctions with iron & #8211; oxide interface layers”, Zongzhi Zhang, S. Cardoso, P. P. Freitas, X. Batlle, P. Wei, N. Barradas, and J. C. Soares, J. Appl. Phys., 89 (2001) p. 6665.
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