Method of manufacturing semiconductor device using...

Details Method of manufacturing semiconductor device using... Method of manufacturing semiconductor device using...

2008-02-12

2010-12-21

Neckel, Alexa D. (Department: 1795)

Chemistry: electrical and wave energy

Apparatus

Electrolytic

C204S229200, C205S082000, C205S084000, C438S007000

Reexamination Certificate

active

07854824

ABSTRACT:
A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.

REFERENCES:
patent: 6275295 (2001-08-01), Sopori
patent: 2003/0045100 (2003-03-01), Saka et al.
patent: 2005/0092610 (2005-05-01), Moore
patent: 5-186898 (1993-07-01), None
patent: 2000-204498 (2000-07-01), None
patent: 2000-315663 (2000-11-01), None
patent: 2005-307274 (2005-11-01), None
Moffat et al., “Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing”, Journal of The Electrochemical Society (2006), pp. C37-C50.
Cho, et al., “Damascene Cu electrodeposition on metal organic chemical vapor deposition-grown Ru thin film barrier”, J. Vac. Sci. Techno. B 22(6), Nov./Dec. 2004, pp. 2649-2653.

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