Method of patterning gate electrodes by reducing sidewall...

Details Method of patterning gate electrodes by reducing sidewall... Method of patterning gate electrodes by reducing sidewall...

2007-02-07

2010-12-28

Tran, Binh X (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

C216S041000

Reexamination Certificate

active

07858526

ABSTRACT:
By performing an anisotropic resist modification prior to the actual resist trimming process, the profile of the end portions of the resist features may be significantly enhanced, for instance by providing substantially vertical sidewall portions. Consequently, an overlap of gate electrodes with the respective isolation structures may be obtained, while nevertheless the probability for a short circuit between opposing end portions of the gate electrodes may be significantly reduced, thereby providing the potential for further scaling down device dimensions.

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patent: 6818519 (2004-11-01), Fang et al.
patent: 2004/0002217 (2004-01-01), Mazur et al.
patent: 2004/0065976 (2004-04-01), Sreenivasan et al.
patent: 2005/0164478 (2005-07-01), Chan et al.
patent: 2005/0191832 (2005-09-01), Huang et al.

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