Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-08-31
2010-12-07
Ghyka, Alexander G (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23021
Reexamination Certificate
active
07847406
ABSTRACT:
An object of the present invention is to provide solder bumps sufficiently satisfying the expected functions and having a small diameter which conventional methods cannot attain, a semiconductor device on which these bumps are mounted, and a bump transferring sheet. The present invention provides a method for forming the bumps, which includes forming a solder alloy material layer and flux material layer one by one on an intermediate metallic layer formed on an external electrode pad in a semiconductor device, and then fusing these layers, wherein each of the solder alloy material layer and flux material layer is formed by a liquid spraying method (e.g., ink jetting method).
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Mar. 7, 2007 Japanese official action.
Arita Hitoshi
Kojima Akio
Cooper & Dunham LLP
Ghyka Alexander G
Nikmanesh Seahvosh J
Ricoh & Company, Ltd.
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