Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1998-04-07

1999-03-02

Picardat, Kevin M.

Electrical connectors

With vitreous-type envelope

Connector or contact secured to each end of double-ended...

438613, H01L 2144

Patent

active

058770780

ABSTRACT:
For a resist pattern having an opening for defining a deposition position of a solder film pattern, a dewatering treatment is conducted while controlling the highest temperature to be reached on the surface of the wafer to lower than the heat resistant temperature of the resist pattern. The dewatering treatment is conducted by sputter etching, high vacuum annealing or drying in an inert gas atmosphere. Subsequently, a solder film is deposited over the entire surface of the wafer, the solder film deposited to the portion other than the inside of the opening is removed together with the resist pattern, and the remaining solder film pattern is finished by a heat melting treatment into a solder ball.

REFERENCES:
patent: 5034345 (1991-07-01), Shirahata
patent: 5270253 (1993-12-01), Arai et al.
patent: 5369299 (1994-11-01), Byrne
patent: 5384284 (1995-01-01), Doan et al.

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