Method of manufacturing an image sensing apparatus in which...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S056000, C438S057000, C257S079000, C257S088000

Reexamination Certificate

active

07732238

ABSTRACT:
A solid-state image sensing apparatus having a three-dimensional structure whose manufacturing process can be simplified is provided. A solid-state image sensing apparatus formed by bonding a first member and a second member is provided. The first member has a first surface on the side of the bonding interface between the first member and the second member and a second surface on the opposite side of the bonding interface. The second member has a third surface on the bonding interface side and a fourth surface on the opposite side of the bonding interface. The first member includes photoelectric conversion elements which are formed on the first surface before the first member is bonded to the second member. The second member includes circuit elements which are formed on the third surface before bonding.

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