Method of forming semiconductor devices

Details Method of forming semiconductor devices Method of forming semiconductor devices

2009-05-19

2010-11-30

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S230000, C438S231000, C438S232000, C438S595000, C257SE21546, C257S374000

Reexamination Certificate

active

07842582

ABSTRACT:
A method of forming semiconductor devices includes providing a semiconductor substrate in which gate insulating patterns and first conductive patterns are formed, performing a first etch process to narrow a width of each of the first conductive patterns, forming an auxiliary layer on the first conductive patterns, the gate insulating patterns, and an exposed surface of the semiconductor substrate, and forming trenches by etching the auxiliary layer and the semiconductor substrate between the first conductive patterns.

REFERENCES:
patent: 6787409 (2004-09-01), Ji et al.
patent: 2003/0211684 (2003-11-01), Guo
patent: 2010/0087043 (2010-04-01), Cheng et al.

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