Semiconductor laser

Details Semiconductor laser Semiconductor laser

2007-03-20

2010-02-02

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S041000

Reexamination Certificate

active

07656918

ABSTRACT:
A semiconductor laser having an n-cladding layer, an optical guide layer, an active layer, an optical guide layer, and a p-cladding layer above an InP substrate, in which the active layer has a layer constituted with Be-containing group II-VI compound semiconductor mixed crystals, and at least one of layers of the n-cladding layer, the optical guide layer, and the p-cladding layer has a layer constituted with elements identical with those of the Be-containing group II-VI compound semiconductor mixed crystals of the active layer, and the layer is constituted with a superlattice structure comprising, as a well layer, mixed crystals of a Be compositions with the fluctuation of the composition being within ±30% compared with the Be composition of the group II-VI compound semiconductor mixed crystals of the active layer, whereby the device characteristics of the semiconductor laser comprising the Be-containing group II-VI compound semiconductor matched with the InP substrate.

REFERENCES:
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patent: WO-97-18592 (1997-05-01), None
“Kato, E. et al,” “Significant Progress in II-VI Blue-Green Laser Diode Lifetime.” Electronics Letters, 5thFeb. 1998, vol. 34, No. 3, 2 pages.
“Waag, A. et al,” “Novel Beryllium Containing II-VI Compounds: Basic Properties and Potential Applications.” 1998 Elsevier Science B.V.,Journal of Crystal Growth, pp. 1-10.
“Kishino, Katsumi et al,” “Yellow-Green Emitters Based on Berylliium-Chalcogenides on InP Substrates,” Phys. Stat Sol. (c) 1, No. 6, 1477-1486 (2004).
“Hayami et al,” “Pretext of the 52NDMeeting of Japan Society of Applied Physics,” 31P Z-N6 (1 pg.), 2005.
“Nakai, Yuki et al,” Aging Characteristics of II-VI Yellow Light Emitting Diodes With Beryllium Chalcogenide (BeZnSeTe) Active Layers on InP Substrates, Phys. Stat. Sol., (a), 201, 12 (2004) (pp. 2708-2711).

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