Memory device and semiconductor device

Details Memory device and semiconductor device Memory device and semiconductor device

2006-04-25

2010-02-09

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185070, C365S185230, C365S185270

Reexamination Certificate

active

07660165

ABSTRACT:
A memory device has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.

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Office Action (Application No. 200610079907.7) dated Apr. 24, 2009.

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