Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2003-09-09
2010-02-23
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S712000, C257S777000, C257SE25006, C257SE23085
Reexamination Certificate
active
07667312
ABSTRACT:
In a multi-chip package having vertically stacked semiconductor integrated circuits (chips), a heat transmitting conductive plate (5) can be interposed between a lower layer semiconductor chip (3) and an upper layer semiconductor chip (4) and connected to a ground wiring of a substrate (2) through a bonding wire (9). A heating transmitting conductive plate (5) at the ground potential can block propagation of noise between the lower layer semiconductor chip (3) and upper layer semiconductor chip (4). Thus, the addition of noise to signals of an analog circuit in the upper layer semiconductor chip (4) can be avoided, reducing noise induced malfunctions. Furthermore, heat generated by the lower layer semiconductor chip (3) and upper layer semiconductor chip (4) can be transmitted through contact points with the heat transmitting conductive plate (5) for dissipation therefrom. This can improve heat dissipating capabilities of the semiconductor device (1) contributing to more stable operation.
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Kawakami Satoko
Kimura Takehiro
Kurita Yoichiro
Kuroda Ryuya
Monbleau Davienne
NEC Electronics Corporation
Nguyen Dilinh P
Walker Darryl G.
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