Thin film transistor used as a switching element in an...

Details Thin film transistor used as a switching element in an... Thin film transistor used as a switching element in an...

2006-08-14

2010-02-02

Nguyen, Khiem D (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257SE51005, C349S043000

Reexamination Certificate

active

07655947

ABSTRACT:
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.

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“Off Current Dependence on Farbrication Process of a Back-Channel-Etching-Type a-Si TFT” by Washizuka et al. (IDW 1997 pp. 207-210).
Nikkei Microdevices (Jun. 2000 p. 175).

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