Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2008-10-13
2010-06-29
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C438S150000
Reexamination Certificate
active
07745826
ABSTRACT:
A TFT substrate includes a substrate and at least a TFT disposed thereon. The TFT includes a semiconductor island and at least a gate. The semiconductor island has a source region, a drain region, and a channel region interposed therebetween. The semiconductor island has sub-grain boundaries. The gate corresponds to the channel region. A first included angle between an extending direction of the gate and a line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 90 degrees. A second included angle between the sub-grain boundaries in the channel region and the line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 0 degree or 90 degrees. Additionally, a method of fabricating a TFT substrate, an electronic apparatus, and a method of fabricating the electronic apparatus are also provided.
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“1st Office Action of China counterpart application”, issued on Apr. 24, 2009, p. 1-p. 6.
“2nd Office Action of China counterpart application”, issued on Jul. 17, 2009, p. 1-p. 5.
Chao Chih-Wei
Sun Ming-Wei
Au Optronics Corporation
Jianq Chyun IP Office
Patton Paul E
Smith Zandra
LandOfFree
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