Method and device for bonding wafers

Details Method and device for bonding wafers Method and device for bonding wafers

2006-10-10

2010-10-12

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C524S523000, C425S071000

Reexamination Certificate

active

07811898

ABSTRACT:
The invention relates to a method and a device (1) for bonding wafers (6, 9). Here at least one wafer surface is first wetted with a molecular dipolar compound, whereupon the wafers are brought into contact with each other. The bonding of the wafers then takes place by means of microwave irradiation.

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W.B. Choi et al., “Wafer to Wafer Direct Bonding Using Surfaces Activated by Hydrogen Plasma Treatment,” ©1999, IEEE/CPMT Int'l Electronics Manufacturing Technology Symposium; p. 148.
Plöβl et al., “Wafer direct bonding: tailoring adhesion between brittle materials,” Materials Science and Engineering, Reports: A Review Journal, R25 (1999), pp. 1-88.

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