Low dark current image sensors by substrate engineering

Details Low dark current image sensors by substrate engineering Low dark current image sensors by substrate engineering

2008-03-17

2010-11-16

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S432000, C257S437000, C257SE31023, C438S072000, C438S093000

Reexamination Certificate

active

07834412

ABSTRACT:
Image sensors and the manufacture of image sensors having low dark current. A SiGe or Ge layer is selectively grown on the silicon substrate of the sensing area using an epitaxial chemical vapor deposition (CVD) method. After the SiGe or Ge growth, a silicon layer may be grown by the same epitaxial CVD method in an in-situ manner. This facilitates the formation of the hole accumulation diode and reduces the defect density of the substrate, resulting in device having a lower dark current.

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