Voltage generation circuit and semiconductor memory device...

Details Voltage generation circuit and semiconductor memory device... Voltage generation circuit and semiconductor memory device...

2007-04-24

2010-02-02

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S541000, C323S281000

Reexamination Certificate

active

07656225

ABSTRACT:
A voltage generation circuit comprises a reference voltage generation circuit; a differential amplifier; an output node; a P-channel MOS transistor; a first resistor series; a second resistor series; a third resistor series; and a selection control circuit. A reference voltage generated by the reference voltage generation circuit is input to a first input terminal of the differential amplifier. The first resistor series is connected between a drain of the P-channel MOS transistor and the output node. The second resistor series is connected between the output node and a second input terminal of the differential amplifier. The third resistor array is connected between the second input terminal of the differential amplifier and a ground. The selection control circuit controls such that a sum of the resistances of the first resistor series and the second resistor series is constant.

REFERENCES:
patent: 6531914 (2003-03-01), Kawakubo
patent: 2001/0011886 (2001-08-01), Kobayashi
patent: 2007/0001753 (2007-01-01), Byeon
patent: 2001-242949 (2001-09-01), None

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