Photo sensor and portable electronic apparatus

Details Photo sensor and portable electronic apparatus Photo sensor and portable electronic apparatus

2008-10-28

2010-02-09

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31091, C257SE31126

Reexamination Certificate

active

07659594

ABSTRACT:
A photo sensor including a gate, a first insulator, a semiconductor layer, a first electrode pattern layer, a second electrode pattern layer, a second insulator and a transparent electrode is provided. The gate is disposed on the substrate. The first insulator covers the gate and a portion of the substrate. The semiconductor layer is disposed on the first insulator above the gate. Moreover, there is a space between the first electrode pattern layer and the second electrode pattern layer located on the semiconductor layer. The second insulator covers a portion of the semiconductor layer, the first electrode pattern layer and the second electrode pattern layer. The transparent electrode is disposed on the second insulator above the semiconductor layer and corresponds to the first electrode pattern layer. The transparent electrode is electrically connected to the first electrode pattern layer, and a portion of the transparent electrode is within the space.

REFERENCES:
patent: 6809718 (2004-10-01), Wei et al.
patent: 2007/0013823 (2007-01-01), Jung et al.
patent: 2007/0046619 (2007-03-01), Sano et al.
patent: 2009/0201042 (2009-08-01), Sellathamby et al.

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