Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2006-10-30
2010-12-28
Watko, Julie Anne (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C029S603130
Reexamination Certificate
active
07859800
ABSTRACT:
A magneto-resistive effect element is provided with a first soft magnetic layer, a magneto-resistive effect film formed directly on the first soft magnetic layer. and a second soft magnetic layer formed on the magneto-resistive effect film. The magneto-resistive effect element is configured as allowing electric current to flow in the thickness-wise direction. The first soft magnetic layer is composed of columnar crystals. The magneto-resistive effect film has an anti-ferromagnetic layer. The anti-ferromagnetic layer is formed directly on the first soft magnetic layer.
REFERENCES:
patent: 6495275 (2002-12-01), Kamiguchi et al.
patent: 6884521 (2005-04-01), Takahashi et al.
patent: 2003/0076627 (2003-04-01), Minor et al.
patent: 2005/0073778 (2005-04-01), Hasegawa et al.
patent: 2007/0035886 (2007-02-01), Kagami et al.
patent: 2007/0188934 (2007-08-01), Meguro et al.
patent: 2008/0112091 (2008-05-01), Shimazawa et al.
patent: 2009/0009913 (2009-01-01), Komagaki
patent: 10-256619 (1998-09-01), None
patent: 10308004 (1998-11-01), None
patent: 2004103204 (2004-04-01), None
Haifeng et al, “Ultrathin high anisotropic magnetoresistance Ni0.81Fe0.19 films”, 2006 J. Phys. D: Appl. Phys. 39 4915.
Bae et al, “High thermal stability of exchange-biased bilayers and bottom giant magnetoresistive spin valves using an alpha-Fe2O3 antiferromagnetic layer”, Appl. Phys. Let. 78, 26, 4163-4165 (Jun. 25, 2001).
Masakiyo Tsunoda, et al., “Magnetic anisotrophy and rotational hysteresis loss in exchange coupled Ni-Fe/Mn-Ir films”, Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 4375-4388.
Miyajima Toyoo
Tsukada Mineharu
Fujitsu Limited
Watko Julie Anne
Westerman Hattori Daniels & Adrian LLP
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