Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-05-18
2010-12-07
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257S737000, C257S751000, C257SE23141
Reexamination Certificate
active
07847407
ABSTRACT:
A semiconductor device which is capable of preventing interface peeling and a crack from occurring in the vicinity of the edge part of a rewiring layer is provided. The semiconductor device comprises a semiconductor substrate; a first interlayer insulation film (a first insulation film) which is formed on the semiconductor substrate, having a first aperture; a first rewiring layer which is formed, ranging from a part of the top surface of the first interlayer insulation film to the inside of the first aperture, and which uppermost surface has a size smaller than the size of the region surrounded by the outer periphery of the surface contacting with the first interlayer insulation film; and a second interlayer insulation film (a second insulation film) which is formed on the first rewiring layer and on the first interlayer insulation film.
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Lee Eugene
Oki Semiconductor Co., Ltd.
Rabin & Berdo P.C.
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