Photodetector including multiple waveguides

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

C257S432000, C257S436000, C257SE31127, C385S001000, C385S002000, C385S003000, C385S039000, C385S050000

Reexamination Certificate

active

07851782

ABSTRACT:
An example photodetector includes a waveguide structure having an active waveguide comprising an absorber for converting photons conveying an optical signal into charge carriers conveying a corresponding electrical signal; a carrier collection layer for transporting the charge carriers conveying the electrical signal; and a secondary waveguide immediately adjacent to the carrier collection layer, for receiving the photons to be detected, and which is evanescently coupled to the active waveguide.

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