Photo mask, exposure method using the same, and method of...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S311000

Reexamination Certificate

active

07662523

ABSTRACT:
A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 5357311 (1994-10-01), Shiraishi
patent: 5447810 (1995-09-01), Chen et al.
patent: 6077633 (2000-06-01), Lin et al.
patent: 6413683 (2002-07-01), Liebmann et al.
patent: 7001693 (2006-02-01), Liebmann et al.
patent: 7074525 (2006-07-01), Wu et al.
patent: 03-210560 (1991-09-01), None
patent: 05-217840 (1993-08-01), None
patent: 06-95360 (1994-04-01), None
patent: 07-140639 (1995-06-01), None
patent: 08-76355 (1996-03-01), None
patent: 8-101491 (1996-04-01), None
patent: 8-160598 (1996-06-01), None
patent: 10-239827 (1998-09-01), None
patent: 11-202475 (1999-07-01), None
patent: 2000-98584 (2000-04-01), None
patent: 2002-353098 (2002-12-01), None
Official Action from the German Patent and Trademark Office dated Mar. 14, 2007, in counterpart German Patent Application No. 10 2004 026 206.3-51.
Notification of Reasons for Rejection from the Japanese patent Office, mailed Nov. 12, 2007, in Japanese Patent Application No. 2004-115702 and English translation thereof.
Final Notice of Rejection issued by the Japanese Patent Office, mailed Mar. 18, 2008, in Japanese Patent Application No. 2004-115702 and English translation of Final Notice.
Notification of Reasons for Rejection from the Japanese Patent Office, mailed Jun. 24, 2008, in Japanese Patent Application No. 2008-006240, and English translation thereof.
Official Letter of Inquiry mailed Sep. 8, 2009, in corresponding Japanese Patent Application No. 2004-115702, and English-language translation therof.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photo mask, exposure method using the same, and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photo mask, exposure method using the same, and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo mask, exposure method using the same, and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4217689

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.