Semiconductor device with tensile strain and compressive strain

Details Semiconductor device with tensile strain and compressive strain Semiconductor device with tensile strain and compressive strain

2008-06-04

2010-11-16

Geyer, Scott B (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

Reexamination Certificate

active

07834414

ABSTRACT:
A semiconductor device according to the present invention includes an active region having a MOS transistor and a groove surrounding the periphery of the active region, in which the groove is filled with a combination of a first material that produces a tensile strain in the active region and a second material that produces a compressive strain. Thereby, the foregoing object is achieved.

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Chinese Office Action dated Sep. 11, 2009, issued in corresponding Chinese Patent Application No. 200500523499.
Korean Office Action dated Feb. 1, 2010, issued in corresponding Korean Patent Application No. 10-2008-7014356.

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