Incremental memory refresh

Details Incremental memory refresh Incremental memory refresh

2008-03-26

2010-10-05

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185110, C365S236000

Reexamination Certificate

active

07808834

ABSTRACT:
A memory system comprises charge storage cells and a refresh control module. The charge storage cells have a charge level decay that is based on lifetime erase operations performed on the charge storage cells. The refresh control module increases charge levels of the charge storage cells to offset the charge level decay without first erasing the charge storage cells. A method of controlling a memory system comprises determining charge level decay of charge storage cells having charge level decay characteristics that are based on lifetime erase operations performed on the charge storage cells; and increasing charge levels of the charge storage cells to offset the charge level decay without first erasing the charge storage cells.

REFERENCES:
patent: 5239505 (1993-08-01), Fazio et al.
patent: 5574684 (1996-11-01), Tomoeda
patent: 6396744 (2002-05-01), Wong
patent: 7542350 (2009-06-01), Park et al.
U.S. Appl. No. 60/884,763, filed Jan. 12, 2004; “Improved Multi-Level Memory”; Pantas Sutardja; 36 pages.

Affiliated with

Also associated with

Rating

Incremental memory refresh does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Incremental memory refresh, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Incremental memory refresh will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4215657