Terbium-doped, silicon-rich oxide electroluminescent devices...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C257S102000

Reexamination Certificate

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07811837

ABSTRACT:
A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.

REFERENCES:
patent: 2003/0032206 (2003-02-01), Hsu et al.
patent: 2006/0183305 (2006-08-01), Gao et al.
patent: 2006/0189014 (2006-08-01), Li et al.
Castagna et al.,High efficiency light emission devices in silicon, Mat. Res. Soc. Symp, vol. 770, (2003).
Sun et al.,Bright green electroluminescence from Tb3+in silicon metal-oxide-semiconductor devices, J. Applied Physics 97 (2005).

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