Semiconductor device

Details Semiconductor device Semiconductor device

2007-11-09

2010-12-28

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257SE27132

Reexamination Certificate

active

07859077

ABSTRACT:
A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.

REFERENCES:
patent: 7453132 (2008-11-01), Gunn et al.
patent: 2007/0114584 (2007-05-01), Jerdev et al.
patent: 6-209119 (1994-07-01), None

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