Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-03-01

2010-10-26

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S200000, C257S201000, C257SE29091, C257SE29253, C257S029000, C257SE29264, C257S472000

Reexamination Certificate

active

07821030

ABSTRACT:
A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.

REFERENCES:
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patent: 6107649 (2000-08-01), Zhao
patent: 2006/0065908 (2006-03-01), Beach
patent: 05-136177 (1993-06-01), None
patent: 2000-100831 (2000-04-01), None
patent: 2002-359256 (2002-12-01), None
patent: 2004-200248 (2004-07-01), None
patent: 2006-156429 (2006-06-01), None
patent: WO 2004061978 (2004-07-01), None
Japanese Notice of Reasons for Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2006-054824 dated Apr. 28, 2009.
Li et al., “High breakdown voltage GaN HFET with field plate”,Electronic Letters, Feb. 1, 2001, vol. 39, No. 3.

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