Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-12-22
2010-10-05
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
Reexamination Certificate
active
07807992
ABSTRACT:
Electronic devices comprising an anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, and cathode are provided, where the photoactive layer comprises a dual dopant in a metallic complex. The dopants are selected so that their emitting wavelengths are essentially the same, while their ionization potentials and electron affinities are substantially different. The dual dopant device allows for tuning the ionization potential of one dopant to enhance hole injection and/or minimize hole trapping, while independently tuning the electron affinity of the other dopant to enhance electron injection and/or minimize electron trapping.
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E.I. du Pont de Nemours and Company
Ho Anthony
Lamming John H.
Lee Eugene
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