Method for manufacturing fuse box having vertically formed...

Details Method for manufacturing fuse box having vertically formed... Method for manufacturing fuse box having vertically formed...

2007-06-29

2010-11-09

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S215000, C257S529000

Reexamination Certificate

active

07829392

ABSTRACT:
A method for manufacturing a fuse box of a semiconductor device includes forming an interlayer dielectric film over a semiconductor substrate including a given lower structure; forming a metal line and a fuse over the interlayer dielectric film; forming a first protective film over the resulting structure; etching the first protective film and the fuse at a given depth by a photo-etching process with a repair mask to form an open region; and forming a second protective film vertical to the fuse.

REFERENCES:
patent: 5879966 (1999-03-01), Lee et al.
patent: 6831349 (2004-12-01), Chuang
patent: 6864124 (2005-03-01), Lee et al.
patent: 2005/0142834 (2005-06-01), Lee
patent: 2005/0161766 (2005-07-01), Sato et al.
patent: 1467839 (2004-01-01), None
patent: 10-2001-0045387 (2001-06-01), None
patent: 10-2002-0005853 (2002-01-01), None
Office Action issued on Jan. 16, 2009, from the State Intellectual Property Office of the People's Republic of China in related Chinese patent application No. 200710136306X.
Notice of Rejection issued from the Korean Intellectual Property Office on Jun. 17, 2008, in counterpart Korean Application No. 10-2006-0069207.

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