Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2008-02-27
2010-11-16
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S551000, C257SE29019, C257SE21544
Reexamination Certificate
active
07834421
ABSTRACT:
Various integrated circuit devices, in particular a diode, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.
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Disney Donald R.
Williams Richard K.
Advanced Analogic Technologies, Inc.
Cruz Leslie Pilar
Patentability Associates
Tran Minh-Loan T
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