Crystal article and method for forming same

Details Crystal article and method for forming same Crystal article and method for forming same

1995-05-22

1996-12-10

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117106, 117913, 117923, C30B 2518

Patent

active

055826415

ABSTRACT:
A crystal article comprises a substrate and single crystals provided on said substrate, with the shape of the contacted surface of said single crystals with said substrate being n-gonal (provided that n.gtoreq.5) or circular.

REFERENCES:
patent: 2921362 (1960-01-01), Nomura
patent: 2929006 (1960-03-01), Herlet
patent: 3016313 (1962-01-01), Pell
patent: 3385729 (1968-05-01), Larchian
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3514346 (1970-05-01), Cray
patent: 4000019 (1976-12-01), van der Brekel
patent: 4670969 (1987-06-01), Yamada et al.
T. Tonchara et al., "Manipulation of nucleation sites and periods over amorphous substrates", Applied Physics Letters, vol. 52, No. 15, Apr. 1988 pp. 1231-1233.
X. Gerbaux et al., "Applicability of the epitaxial nucleation in submicroslopie holes (ENSH) method to vapour growth: Preparation of oriented thin films of naphthalene, durene, benzoic acid and tellurium", Journal of Crystal Growth, vol. 47, 1979, pp. 593-504, Amsterdam, NL.

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