Amplifier device

Details Amplifier device Amplifier device

2009-10-19

2010-11-09

Nguyen, Patricia (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including combined diverse-type semiconductor device

C330S149000, C330S278000

Reexamination Certificate

active

07830210

ABSTRACT:
Provided is an amplifier device including a J-FET, a bipolar transistor, a first resistor and a second resistor. The amplifier device has a configuration in which a gate of the J-FET is connected to one end of an ECM and one end of the first resistor, a drain of the J-FET is connected to an input terminal of the bipolar transistor, a high-potential side of the bipolar transistor is connected to one end of a load resistor, the other end of the first resistor is grounded, a source of the J-FET and a low-potential side of the bipolar transistor are connected to one end of the second resistor, the other end of the second resistor is grounded, and an output voltage is drawn from the high-potential side of the bipolar transistor.

REFERENCES:
patent: 4037064 (1977-07-01), Yasuda
patent: 4577160 (1986-03-01), Lettvin et al.
patent: 6888408 (2005-05-01), Furst et al.
patent: 7042228 (2006-05-01), Lally et al.
patent: 7224226 (2007-05-01), Kojima et al.
patent: 7421254 (2008-09-01), Behzad
patent: 5-167358 (1993-07-01), None
patent: 2003-243944 (2003-08-01), None

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