Process for preparing high sensitivity semiconductive magnetores

Details Process for preparing high sensitivity semiconductive magnetores Process for preparing high sensitivity semiconductive magnetores

1989-07-07

1991-04-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG3, 148DIG5, 148DIG118, 148DIG152, 156603, 437 82, 437247, 437973, H01L 2120

Patent

active

050082159

ABSTRACT:
A process for preparing high sensitivity indium antimonide film magnetoresistance element. A silicon single crystal wafer is treated with oxidative diffusion to form a layer of silicon oxide on the surface of the silicon single crystal, a layer of indium antimonide is grown on the substrate by vapor deposition, and the indium antimonide layer is then subjected to a specific annealing treatment in which the indium antimonide layer is partially oxidized and then re-crystallized. The resultant magnetoresistance element possessing improved sensitivity, stability and suitable for large scale production is obtained.

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