Method for forming FET with a super lattice channel

Details Method for forming FET with a super lattice channel Method for forming FET with a super lattice channel

1989-09-14

1991-04-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 19, 437907, 437110, 148DIG90, 148DIG91, 148DIG160, H01L 21268, H01L 21335

Patent

active

050082116

ABSTRACT:
An improved FET is disclosed. The transistor is characterized in that its channel is constituted in the form of a super lattice. The super lattice structure provides a number of square well potential areas through which carriers can pass with little interaction with the gate insulating film.

REFERENCES:
patent: 4661829 (1987-04-01), Bean et al.
patent: 4792832 (1988-12-01), Baba et al.
VLSI Technology, 1983, Sze, pp. 51 and 220-224.
Kamins, "Surface Stabilization of Poly. Silicon Films During Laser Recrystallization", J. Electrochem. Soc., 128(8), 8/81, pp. 1824-1826.
Bean, "Epitaxial Laser Crystallization of Thin Film Amorphous Silicon", Appl. Phys. Lett., vol. 33, No. 3, 8/78, pp. 227-229.
Labley, "Effects of Various Encapsulating Films on Laser Recrystall. of Silicon on SiO.sub.2 ", J. Appl. Phys., 53(12), 12/82, pp. 9038-9042.
Kimura, "Strong <100> Texture Formation of Poly. Silicon Films on Amorphous Insulator by Laser Recrystallization", Appl. Phys. Lett., 45(8), 10/84, pp. 854-856.

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