Method of manufacturing a semiconductor device including outdiff

Details Method of manufacturing a semiconductor device including outdiff Method of manufacturing a semiconductor device including outdiff

1990-01-10

1991-04-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437162, 437239, 437956, 437968, 148DIG131, H01L 21225

Patent

active

050082094

ABSTRACT:
A method of manufacturing a semiconductor device is set forth using anisotropic etching techniques, such as plasma etching and reactive ion etching to obtain interconnection patterns having accurately defined rims. Various different kinds of transistors can be manufacturing in the same semiconductor body using these techniques.

REFERENCES:
patent: 4209349 (1980-06-01), Ho et al.
patent: 4209350 (1980-06-01), Ho et al.
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4450470 (1984-05-01), Shiba
patent: 4466175 (1984-08-01), Coe
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4545114 (1985-10-01), Ito et al.
patent: 4617071 (1986-10-01), Vora

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