Piezoelectric thin film device

Details Piezoelectric thin film device Piezoelectric thin film device

2009-01-23

2010-06-08

Benson, Walter (Department: 2837)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

Reexamination Certificate

active

07732996

ABSTRACT:
A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and an upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3(0<x<1), and in which dependency of the piezoelectric constant d31of the piezoelectric thin film on applied electric field [=|(d31under 70 kV/cm)−(d31under 7 kV/cm)|/|d31under 70 kV/cm|] is 0.20 or less.

REFERENCES:
patent: 2008/0303377 (2008-12-01), Oka et al.
patent: 2009/0302715 (2009-12-01), Shibata et al.
patent: 2005-203725 (2005-07-01), None
Takuya Mino, et al., Piezoelectric Properties of Epitaxial NaNbO3 Thin Films Deposited on (001) SrRuO3/Pt/MgO Substrates, Japanese Journal of Applied Physics, 2007, vol. 46, No. 10B, pp. 6960-6963.

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