High resistivity silicon carbide

Compositions: ceramic – Ceramic compositions – Carbide or oxycarbide containing

Reexamination Certificate

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Details

C501S092000

Reexamination Certificate

active

07727919

ABSTRACT:
A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1E5 Ω cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.

REFERENCES:
patent: 3951587 (1976-04-01), Alliegro et al.
patent: 4561891 (1985-12-01), Maeda et al.
patent: 4701427 (1987-10-01), Boecker et al.
patent: 5011639 (1991-04-01), Urasato et al.
patent: 5770324 (1998-06-01), Holmes et al.
patent: 7166523 (2007-01-01), Nagasawa
patent: 2002/0155054 (2002-10-01), Aihara et al.
patent: 2005/0148455 (2005-07-01), Narendar et al.
patent: 2006/0091402 (2006-05-01), Shiomi et al.
patent: 0251218 (1988-01-01), None
patent: 0967189 (1999-12-01), None
patent: 0885858 (2003-11-01), None
patent: 2005314217 (2005-11-01), None
patent: 9736843 (1997-10-01), None
Storm, R., “Processing of Sintered Alpha SiC,” The American Society of Mechanical Engineers, Carborundum Company, Advanced Materials Division, Niagara Falls, NY (Abstract Only).
Storm, R. et al., “Sintered Alpha Silicon Carbide Ceramics for High Temperature Structural Application: Status Review and Recent Developments,” The American Society of Mechanical Engineers, Schio Engineered Materials Company, Niagara Falls, NY, 1985 (Abstract Only).

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