Patterned mask having a transparent etching stopper layer

Details Patterned mask having a transparent etching stopper layer Patterned mask having a transparent etching stopper layer

1991-12-27

1999-03-02

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430330, G03F 900

Patent

active

058768777

ABSTRACT:
An optical exposure mask for patterning an optical beam comprises an etching stop layer of a material that is substantially transparent with respect to the optical beam, a transparent pattern provided on one of upper and lower major surfaces of the etching stop layer, and an opaque pattern provided on one of the upper and lower major surfaces of the etching stop layer for patterning the optical beam, wherein the material for the etching stop layer is selected from a group essentially consisted of Al.sub.2 O.sub.3, MgO and a mixture thereof, and the etching stop layer has an etching rate that is substantially smaller than the etching rate of a material forming the transparent pattern for any of dry and wet etching processes.

REFERENCES:
patent: 4401367 (1983-08-01), Grantham et al.
patent: 4767724 (1988-08-01), Kim et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5114813 (1992-05-01), Snoot et al.

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