Process for growing a film epitaxially upon an oxide surface and

Details Process for growing a film epitaxially upon an oxide surface and Process for growing a film epitaxially upon an oxide surface and

1995-08-21

1999-03-02

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of inorganic material

428700, 428701, 428702, B32B 1500

Patent

active

058768661

ABSTRACT:
A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

REFERENCES:
patent: 3655429 (1972-04-01), DeKlerk
patent: 4996187 (1991-02-01), Chai
patent: 5030613 (1991-07-01), Chai
patent: 5221367 (1993-06-01), Chisholm et al.
patent: 5225031 (1993-07-01), McKee
patent: 5323023 (1994-06-01), Fork
patent: 5323024 (1994-06-01), Adams

Affiliated with

Also associated with

Rating

Process for growing a film epitaxially upon an oxide surface and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for growing a film epitaxially upon an oxide surface and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for growing a film epitaxially upon an oxide surface and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-420859