Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2009-10-16
2010-12-28
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257SE33068, C257SE33072
Reexamination Certificate
active
07859003
ABSTRACT:
Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.
REFERENCES:
patent: 2005/0139847 (2005-06-01), Kim et al.
patent: 2006/0118798 (2006-06-01), Lee
patent: 2006/0157721 (2006-07-01), Tran et al.
patent: 2008/0006836 (2008-01-01), Lee
patent: 2007-207889 (2007-08-01), None
patent: 10-2005-0070459 (2005-07-01), None
patent: 10-2006-0059783 (2006-06-01), None
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Tran Minh-Loan T
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