Manufacturing apparatus of magnetoresistance elements

Details Manufacturing apparatus of magnetoresistance elements Manufacturing apparatus of magnetoresistance elements

2005-08-24

2010-06-08

Neckel, Alexa D (Department: 1795)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298010

Reexamination Certificate

active

07731825

ABSTRACT:
A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.

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Notice of Reason(s) for Refusal in JP 2003-077888 dated Nov. 6, 2008, and English Translation thereof.

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